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IRFP048N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
55
–––
–––
0.052
––– V V GS = 0V, I D = 250μA
––– V/°C Reference to 25°C, I D = 1mA ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.016
?
V GS = 10V, I D = 37A ?
––– R G = 5.1 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
78
32
48
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 32A ?
25 V DS = 55V, V GS = 0V
μA
250 V DS = 44V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
89 I D = 32A
20 nC V DS = 44V
39 V GS = 10V, See Fig. 6 and 13 ??
––– V DD = 28V
––– I D = 32A
ns
––– R D = 0.85 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
5.0
13
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1900
620
270
––– V GS = 0V
––– pF V DS = 25V
––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
(Body Diode)
–––
–––
45
MOSFET symbol
showing the
D
I SM
Pulsed Source Current
(Body Diode) ??
–––
–––
210
A
integral reverse
p-n junction diode.
G
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
–––
–––
94
360
1.3
140
540
V
ns
nC
T J = 25°C, I S = 37A, V GS = 0V ?
T J = 25°C, I F = 32A
di/dt = 100A/μs ??
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 25V, starting T J = 25°C, L = 530μH
R G = 25 ? , I AS = 32A. (See Figure 12)
? I SD ≤ 32A, di/dt ≤ 250A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRFZ48N data and test conditions
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